Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)
Source abstract
Abstract
In article number 1900207, Suresh Sundaram, Abdallah Ougazzaden, and co-workers demonstrate self-organized GaN nanorods formation on layered h-BN templates by van der Waals epitaxial growth. This approach is used to grow III-N nanowire light-emitting diodes. In addition, this approach also mitigates transfer processes and scaling issues seen with other 2D materials, since both the 1D (GaN nanorods) and 2D (h-BN) are grown at the wafer-scale and in one epitaxial growth run.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Georgia Institute of Technology School of Electrical and Computer Engineering GT‐Lorraine 57070 Metz France
CNRS UMI 2958 GT‐CNRS 2 Rue Marconi 57070 Metz France
GT Lorraine 2 Rue Marconi 57070 Metz France
Centre de Nanosciences et de Nanotechnologies Université Paris‐Saclay C2N – Site de Marcoussis Route de Nozay F‐91460 Marcoussis France
Institut Lafayette 2 Rue Marconi 57070 Metz France
References
Reference metadata was not supplied for this record.