Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)
Source abstract
Abstract
Oxygen vacancy on the surface of BiVO4 photoanode is a double-edged sword for the photoelectrochemical performance. It can increase the free charge density of BiVO4, but inducing the recombiation of free photogenerated carriers. In article number 1601235, Weibin Li, FengHui Tian, Jin-Ping Ao, and co-workers demostrate that quasi-oxygen vacancy forming on the surface of the BiVO4 active facet is the true reason to improve the photoelectrochemical performance of it.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Photocatalysis Techniques · E-commerce and Technology Innovations
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Affiliations
Institute of Technology and Science Tokushima University 2‐1 Minami‐Josanjima Tokushima 770‐8506 Japan
College of Environment and Safety Engineering Qingdao University of Science and Technology No. 53 Zhengzhou Road Qingdao 266042 China
The Cultivation Base for State Key Laboratory Qingdao University No. 308 Ningxia Road Qingdao 266071 P. R. China
References
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