DataVXAdvanced Materials InterfacesPaper
journal article·2020-06Open access

Light‐Emitting Diodes: Enhanced Brightness and Device Lifetime of Quantum Dot Light‐Emitting Diodes by Atomic Layer Deposition (Adv. Mater. Interfaces 12/2020)

Gi‐Hwan Kim, Kyeongchan Noh, Jisu Han, Minsu Kim, Nuri Oh, Woongkyu Lee, Hyon Bin Na, Chansun Shin, Tae‐Sik Yoon, Jaehoon Lim, Seong‐Yong Cho

Advanced Materials Interfaces· Volume 7· Issue 12
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Source abstract

Abstract

The atomic layer deposited (ALD) ZnO significantly enhances the luminance and device lifetime of green-emitting quantum dot (QD) light-emitting diodes. In article number 2000343, Jaehoon Lim, Seong-Yong Cho, and coworkers show that ALD ZnO provides improved interfacial property with QDs due to the smooth roughness from the ALD growth nature and ligand exchange behavior.
Source: openalex_inverted_index · Quality: baseline

Research context

Materials processing

OpenAlex topics: Quantum Dots Synthesis And Properties

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Affiliations

Department of Materials Science and Engineering Myongji University Yongin 17058 Korea

Department of Energy Science and Center for Artificial Atoms Sungkyunkwan University (SKKU) Suwon 16419 Korea

Department of Chemical Engineering Ajou University Suwon 16499 Korea

Department of Materials Science and Engineering Seoul National University Seoul 08846 Korea

Division of Materials Science and Engineering Hanyang University Seoul 04763 Korea

Department of Electrical Engineering Myongji University Yongin 17058 Korea

Department of Chemical Engineering Myongji University Yongin 17058 Korea

References

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