journal article·2016-08Open access

Special Section Chemical Vapor Deposition Graphene Deposition: Doping Effects and Grain Boundaries in Thermal CVD Graphene on Recrystallized Cu Foil (Adv. Mater. Interfaces 16/2016)

Jan Čermák, Takatoshi Yamada, Kristína Ganzerová, Bohuslav Rezek

Advanced Materials Interfaces· Volume 3· Issue 16

Abstract

In article 1600166, Jan Čermák, Takatoshi Yamada, and co-workers describe doping effects in graphene. The cover illustrates a conductivity landscape of thermal chemical vapor deposition (CVD) graphene on polycrystalline copper foil. The morphology of Cu foil substrate (bottom layer) is modulated by cuprous oxide on some grains. Thermal CVD graphene (middle layer) follows well the substrate morphology. Graphene quality, its electronic and mechanical interaction with Cu grains and boundaries control local electrical current as illustrated by the atomic force microscopy conductivity map (top layer).
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Physics ASCR v.v.i, Cukrovarnická 10 16200 Prague Czech Republic

National Institute of Advanced Industrial Science and Technology (AIST) Central 5, 1‐1‐1 Higashi Tsukuba 3, 05‐8565 Japan

Faculty of Electrical Engineering Czech Technical University Technická 2 166 27 Prague Czech Republic

References

Reference metadata was not supplied for this record.