Special Section Chemical Vapor Deposition Graphene Deposition: Doping Effects and Grain Boundaries in Thermal CVD Graphene on Recrystallized Cu Foil (Adv. Mater. Interfaces 16/2016)
Source abstract
Abstract
In article 1600166, Jan Čermák, Takatoshi Yamada, and co-workers describe doping effects in graphene. The cover illustrates a conductivity landscape of thermal chemical vapor deposition (CVD) graphene on polycrystalline copper foil. The morphology of Cu foil substrate (bottom layer) is modulated by cuprous oxide on some grains. Thermal CVD graphene (middle layer) follows well the substrate morphology. Graphene quality, its electronic and mechanical interaction with Cu grains and boundaries control local electrical current as illustrated by the atomic force microscopy conductivity map (top layer).
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications
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Affiliations
Institute of Physics ASCR v.v.i, Cukrovarnická 10 16200 Prague Czech Republic
National Institute of Advanced Industrial Science and Technology (AIST) Central 5, 1‐1‐1 Higashi Tsukuba 3, 05‐8565 Japan
Faculty of Electrical Engineering Czech Technical University Technická 2 166 27 Prague Czech Republic
References
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