Nature of Electron Scattering in LaAlO3/SrTiO3 Interfaces Near the Critical Thickness
Source abstract
Abstract
Abrupt metal-to-insulator transition at the polar (e.g., LaAlO3) and nonpolar oxide (e.g., SrTiO3) heterointerfaces is fascinating. In the vicinity of the metal-to-insulator transition critical thickness where the exact critical thickness is found to be 3.65 ± 0.05 uc, strain, carrier concentration, and Kondo induced scattering manifest their great sensitive role on carrier mobility in LaAlO3/SrTiO3 interfaces. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
NUSNNI‐Nanocore National University of Singapore Singapore 117411 Singapore
National University of Singapore Graduate School for Integrative Sciences & Engineering (NGS) 28 Medical Drive Singapore 117456 Singapore
MESA+ Institute for Nanotechnology University of Twente P.O. Box 217 7500 AE Enschede The Netherlands
Department of Electrical & Computer Engineering National University of Singapore Singapore 117576 Singapore
Funding
Dutch NWO foundation
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