Electron Holography: Correlative High‐Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer (Adv. Mater. Interfaces 1/2015)
Source abstract
Abstract
Sub-nanometer resolution 2D strain maps of the InGaN/GaN multiquantum wells in conventional blue light emitting diodes reveal that the InGaN quantum wells are compressively strained and elongated along the polar growth direction, exerting compressive stress/strain on the GaN quantum barriers. In article 1400281, S. H. Oh and co-workers demonstrate that a combined analysis of the strain maps with the total charge density map quantitatively evaluates the internal piezoelectric fields and the electrostatic screening interaction between the polarization charges and the free charge carriers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 790–784 Korea
Institute for Experimental Physics Ulm University Ulm 89081 Germany
National Institute for Nanomaterials Technology (NINT) Pohang University of Science and Technology (POSTECH) Pohang 790–784 Korea
Department of Materials Science and Engineering The Pennsylvania State University PA 16802 USA
References
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