journal article·2017-02

Using a Vapor‐Phase Surfactant to Control Gold Metal Plate Growth

Weipeng Zhang, Gangotri Dey, David J. Mandia, Seán T. Barry

Advanced Materials Interfaces· Volume 4· Issue 4
Publisher page

Abstract

Hexamethyldisilazide‐1,3‐diisopropylimidazolidine‐2‐ylidenegold(I) (1) is used to deposit gold microplates with (111) faces. In the absence of any secondary vapor‐phase surfactant, these plates show secondary nucleation and growth of gold metal nanoparticles on the (111) faces. When tetrahydrothiophene (THT) is used as a secondary, vapor‐phase surfactant, plate size increases, and secondary nucleation is controllable by temperature. Deposition of gold microplates at 370 °C using a 45 mTorr overpressure of THT shows the best experimental results, growing 20 µm2 plateaus with no apparent secondary nucleation. Computational modelling demonstrates that THT is a stronger surfactant than the carbene ligand (from the gold precursor) due to steric hindrance from the alkyl groups present in the carbene ligand.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Surface Modification and Superhydrophobicity · Copper Interconnects and Reliability · Minerals Flotation and Separation Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Chemistry Department Carleton University 1125 Colonel By Drive Ottawa ON K1S 5B6 Canada

IMPACT George Washington University Washington DC 200052 USA

Funding

Natural Sciences and Engineering Research Council of Canada

References (30)

Show source-provided references
1. 10.1147/rd.425.056710.1147/rd.425.0567 ↗
2. 10.1002/978352765257010.1002/9783527652570 ↗
3. 10.1021/ja807802r10.1021/ja807802r ↗
4. 10.1016/j.apsusc.2009.03.08310.1016/j.apsusc.2009.03.083 ↗
5. 10.1016/j.poly.2009.03.02510.1016/j.poly.2009.03.025 ↗
6. 10.1039/C2CC14468A10.1039/C2CC14468A ↗
7. Gordon P. G. · ECS J. Solid State Sci. Technol. · 2015 · 4 · N110.1149/2.0261501jss ↗
8. 10.1002/adma.20070146010.1002/adma.200701460 ↗
9. 10.1002/cvde.20060651910.1002/cvde.200606519 ↗
10. 10.1021/cm200402j10.1021/cm200402j ↗
11. 10.1021/acs.chemmater.5b0456210.1021/acs.chemmater.5b04562 ↗
12. Baum T. H. · 2008 · Ch. 6
13. 10.1002/anie.20046065610.1002/anie.200460656 ↗
14. 10.1039/c3an00156c10.1039/c3an00156c ↗
15. 10.1063/1.490086610.1063/1.4900866 ↗
16. 10.1016/j.jcis.2014.10.01710.1016/j.jcis.2014.10.017 ↗
17. 10.1039/C2RA21854B10.1039/C2RA21854B ↗
18. 10.1021/acs.chemmater.5b0271210.1021/acs.chemmater.5b02712 ↗
19. 10.1002/adma.20090127110.1002/adma.200901271 ↗
20. 10.1111/j.1467-9965.2006.00262.x10.1111/j.1467-9965.2006.00262.x ↗
21. 10.1021/la049286210.1021/la0492862 ↗
22. 10.1021/jp509334u10.1021/jp509334u ↗
23. 10.1021/jp030382610.1021/jp0303826 ↗
24. 10.1016/j.cattod.2011.05.04110.1016/j.cattod.2011.05.041 ↗
25. 10.1002/sia.218010.1002/sia.2180 ↗
26. 10.1088/0953-8984/21/39/39550210.1088/0953-8984/21/39/395502 ↗
27. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
28. N.Marzari Standard Solid‐State Pseudopotentials (SSSP) Library http://theossrv1.epfl.ch/Main/Pseudopotentials(accessed: June2016).
29. 10.1002/jcc.2049510.1002/jcc.20495 ↗
30. 10.1063/1.47792310.1063/1.477923 ↗