Light‐Tunable 2D Esaki Diode Photodetector with Well‐Balanced High Detectivity and Response Speed
Source abstract
Abstract
Abstract Van der Waals (vdW) heterojunctions composed of 2D layered materials exhibit novel physical phenomena that can power a range of electronic and photonic applications. Here, the first demonstration of the light switchable mechanism between the rectifier diode and Esaki diode in SnS2/WSe2‐black phosphorus (BP) vdW heterojunctions is presented. In this design, the photogating effect of WSe2‐BP junction is employed as the switch toggle between rectifier diode and Esaki diode. Based on this light switchable mechanism, a super‐linear photocurrent‐power dependence is observed and a high‐performance photodetector with high detectivity (5.1 × 1011 Jones) and rapid response speed (<112 us) is obtained. A feasible strategy for a well‐balanced photodetector with high detectivity and response speed in the vdW heterojunction is provided.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics Beihang University Beijing 100191 China
Key Laboratory of Optoelectronics Technology College of Microelectronics Faculty of Information Technology Beijing University of Technology Beijing 100124 China
Faculty of Materials and Manufacturing Beijing University of Technology Beijing 100124 China
Funding
Natural Science Foundation of Beijing Municipality · National Natural Science Foundation of China · NSAF Joint Fund · National Key Research and Development Program of China
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