journal article·2017-04Open access

Hydrogen Silsesquioxane‐Based Nanofluidics

Sathyanarayanan Punniyakoti, Ragavendran Sivakumarasamy, Francois Vaurette, Pierre Joseph, Katsuhiko Nishiguchi, Akira Fujiwara, Nicolas Clément

Advanced Materials Interfaces· Volume 4· Issue 7

Abstract

Nanofluidics show great promise for the control of small volumes and single molecules, especially for biological and energy applications. To build up more and more complex nanofluidics systems, a versatile and reproducible fabrication technique with nanometer precision alignment is desirable. In this article, two e‐beam lithography methods to fabricate nanofluidic channels based on hydrogen silsesquioxane, a high‐resolution negative‐tone inorganic resist, are presented. The robustness and versatility of the fabrication processes are demonstrated on silicon, glass, and flexible substrates. The high precision ability is illustrated with nanometric alignment of nanofluidic channels on gold nanoparticles and nanotransistor sensors, as well as for 3D nanofluidics prototyping. Furthermore, an unexpected extremely slow water evaporation rate (≈1 week for 300 μm long nanochannels) is noticed. This feature enables a simple and reliable manipulation of nanofluidic chips for various studies.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Nanofabrication and Lithography Techniques · Semiconductor materials and devices · Microfluidic and Capillary Electrophoresis Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

IEMN‐CNRS University of Lille Avenue Poincaré 59652 Villeneuve d'Ascq France

LAAS‐CNRS Université de Toulouse CNRS 31077 Toulouse France

NTT Basic Research Laboratories, 3‐1 Morinosato Wakamiyia Atsugi‐shi 243‐0198 Japan

Funding

CPER CENIA · Nord Pas de Calais council · RENATECH network

References (58)

Show source-provided references
1. 10.1002/smll.20120024010.1002/smll.201200240 ↗
2. 10.1103/PhysRevLett.94.19610110.1103/PhysRevLett.94.196101 ↗
3. 10.1021/nl072253x10.1021/nl072253x ↗
4. 10.1002/adfm.20090231210.1002/adfm.200902312 ↗
5. 10.1021/nl204087f10.1021/nl204087f ↗
6. 10.1002/smll.20110224010.1002/smll.201102240 ↗
7. 10.1063/1.479497310.1063/1.4794973 ↗
8. 10.1021/am100592f10.1021/am100592f ↗
9. 10.1117/1.366521510.1117/1.3665215 ↗
10. 10.1021/ac702296u10.1021/ac702296u ↗
11. 10.1116/1.213035810.1116/1.2130358 ↗
12. 10.1021/nl080190s10.1021/nl080190s ↗
13. 10.1021/ma982034l10.1021/ma982034l ↗
14. 10.1021/ma400855z10.1021/ma400855z ↗
15. 10.1002/(SICI)1099-0518(19990401)37:7<1017::AID-POLA16>3.0.CO;2-F10.1002/(SICI)1099-0518(19990401)37:7<1017::AID-POLA16>3.0.CO;2-F ↗
16. 10.1116/1.58983710.1116/1.589837 ↗
17. 10.1039/b704851c10.1039/b704851c ↗
18. 10.1016/j.mee.2007.01.02210.1016/j.mee.2007.01.022 ↗
19. 10.1088/0957-4484/26/42/42530210.1088/0957-4484/26/42/425302 ↗
20. 10.1002/smll.20130165810.1002/smll.201301658 ↗
21. Wiecha P. R. · Nat. Nanotechnol. · 2016
22. 10.1063/1.474023110.1063/1.4740231 ↗
23. 10.1063/1.300632210.1063/1.3006322 ↗
24. Sivakumarasamy R. · Anal. Methods · 2014 · 97 · 6
25. 10.1103/PhysRevLett.99.05830210.1103/PhysRevLett.99.058302 ↗
26. 10.1117/1.186913210.1117/1.1869132 ↗
27. 10.1088/0957-4484/17/13/01810.1088/0957-4484/17/13/018 ↗
28. 10.1039/b315859d10.1039/b315859d ↗
29. 10.1039/B715917J10.1039/B715917J ↗
30. 10.1039/b716382g10.1039/b716382g ↗
31. 10.1021/nl034676e10.1021/nl034676e ↗
32. 10.1016/j.diamond.2003.11.09710.1016/j.diamond.2003.11.097 ↗
33. 10.1016/j.mee.2009.12.07910.1016/j.mee.2009.12.079 ↗
34. Chauvet F. · Phys. Rev. Lett. · 2009 · 110 · 124
35. 10.1016/S0009-2509(97)00348-510.1016/S0009-2509(97)00348-5 ↗
36. 10.1103/PhysRevLett.95.25610710.1103/PhysRevLett.95.256107 ↗
37. 10.1016/j.ijheatmasstransfer.2006.09.00110.1016/j.ijheatmasstransfer.2006.09.001 ↗
38. 10.1073/pnas.101407510910.1073/pnas.1014075109 ↗
39. 10.1038/nnano.2014.2810.1038/nnano.2014.28 ↗
40. Joseph P. · 2010
41. 10.1039/b509819j10.1039/b509819j ↗
42. 10.1021/ac010217r10.1021/ac010217r ↗
43. 10.1038/3982710.1038/39827 ↗
44. 10.1073/pnas.160413411310.1073/pnas.1604134113 ↗
45. 10.1029/2008GL03523010.1029/2008GL035230 ↗
46. 10.1038/srep1360010.1038/srep13600 ↗
47. 10.1039/b819520j10.1039/b819520j ↗
48. 10.1021/nl050606r10.1021/nl050606r ↗
49. 10.1039/c3lc41171k10.1039/c3lc41171k ↗
50. 10.1002/smll.20110091510.1002/smll.201100915 ↗
51. 10.1021/nn301850g10.1021/nn301850g ↗
52. 10.1039/C4NR06180B10.1039/C4NR06180B ↗
53. 10.1038/ncomms1285010.1038/ncomms12850 ↗
54. 10.1021/nl401987910.1021/nl4019879 ↗
55. 10.1021/acsnano.5b0742510.1021/acsnano.5b07425 ↗
56. 10.1063/1.353595810.1063/1.3535958 ↗
57. R.Sivakumarasamy K.Nishiguchi R.Hartkamp B.Siboulet J.‐F.Dufreche A.Fujiwara N.Clement Selective‐layer‐free Blood Ionogram using a Nanoscale Silicon Transistor that Breaks the Boltzman Ion distribution unpublished.
58. 10.1021/nl101918m10.1021/nl101918m ↗