journal article·2020-05Open access

Self‐Driven Photodetectors: GaSe/MoS2 Heterostructure with Ohmic‐Contact Electrodes for Fast, Broadband Photoresponse, and Self‐Driven Photodetectors (Adv. Mater. Interfaces 9/2020)

Zhenbei He, Junxiong Guo, Shangdong Li, Zhicheng Lei, Lin Lin, Yizhen Ke, Wenjing Jie, Tianxun Gong, Yuan Lin, Tiedong Cheng, Wen Huang, Xiaosheng Zhang

Advanced Materials Interfaces· Volume 7· Issue 9

Abstract

In article number 1901848 Zhenbei He, Wen Huang, Xiaosheng Zhang and co-workers demonstrate a vertically aligned GaSe/MoS2 heterostructure with Ohmic-contact indium tin oxide (ITO) electrodes. Transparent glass is used as a substrate for the device. Therefore, glass is used as background in the cover picture. The self-driven GaSe/MoS2 heterojunction photodetector can realize light detection without external power. Therefore, the ITO/GaSe/MoS2/ITO device looks like a battery. In addition, compared with GaSe/MoS2 heterostructure with Schottky-contact Ni/Au electrodes, the GaSe/MoS2 heterostructure with Ohmic-contact ITO electrodes demonstrates more outstanding performance.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films

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Affiliations

State Key Laboratory of Electronic Thin Films and Integrated Devices School of Electronic Science and Engineering (National Exemplary School of Microelectronics) University of Electronic Science and Technology of China Chengdu 610054 China

College of Chemistry and Materials Science Sichuan Normal University Chengdu 610066 China

School of Electrical Engineering and Automation Jiangxi University of Science and Technology Ganzhou 341000 China

References

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