DataVXAdvanced Materials InterfacesPaper
journal article·2025-06Open access

Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate

Haidong Yuan, Liwei Wang, Jiangming Guo, Ruimei Yuan, Zhenhua Lin, Jincheng Zhang, Lixin Guo, Yue Hao, Jingjing Chang

Advanced Materials Interfaces· Volume 12· Issue 11
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Source abstract

Abstract

Abstract Although GaN has successfully epitaxy growth on 4H‐SiC substrate, its kinetics mechanism, and how to control the morphology and polarity of epitaxial GaN have not been revealed yet. Herein, by investigating the epitaxial process of GaN growth on 4H‐SiC substrate, we found that the Si‐TH and C‐MT configurations are stable for Ga‐N co‐adsorption, S nucleation and epitaxy growth. Ga‐polar GaN has been found in the Si‐TH configuration, whereas potential N‐polar GaN has been realized in Si‐TM and C‐TH configurations. Besides, the predicted novel 4|8 GaN with non‐polar has been found in the C‐MT configuration, resulting from the polarity competition of GaN nucleation. Both layered GaN and novel 4|8 GaN exhibit quantum effects here. Our work not only reveals the kinetics mechanism of GaN epitaxy growth on 4H‐SiC substrate in‐depth, but also provides a potential way to control the structure and polarity of epitaxial GaN with precise configurations in situ.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Silicon Carbide Semiconductor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Interdisciplinary Research Center for Flexible Electronics Academy of Advanced Interdisciplinary Research Xidian University Xi'an 710071 China

State Key Laboratory of Wide‐Bandgap Semiconductor Devices and Integrated Technology Faculty of Integrated Circuit Xidian University Xi'an 710071 China

School of Physics Xidian University 2 South Taibai Road Xi'an 710071 China

State Key Laboratory of Solidification Processing Northwestern Polytechnical University Xi'an 710072 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Postdoctoral Research Foundation of China · Basic and Applied Basic Research Foundation of Guangdong Province

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