Exploring “No Man's Land”—Arrhenius Crystallization of Thin‐Film Phase Change Material at 1 000 000 K s−1 via Nanocalorimetry (Adv. Mater. Interfaces 23/2022)
Source abstract
Abstract
Arrhenius Crystallization of Ge2Sb2Te5 In article number 2200429, Jie Zhao, Jian Hui, Leslie H. Allen, and co-workers investigate the crystallization of 10–40 nm thick Ge2Sb2Te5 (GST) via nanocalorimetry with a heating rate up to 1,000,000 K/s. GST shows Arrhenius kinetics and crystallization growth rate (CGV) consistent with that of actual phase-change memory (PCM) cells. This addresses a 10-year-debate originated from the unexpected non-Arrhenius kinetics uncovered by commercialized chip-based calorimetry with CGV 103–105 higher than that of PCM devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
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Affiliations
Department of Material Science and Engineering Coordinated Science Laboratory Frederick‐Seitz Materials Research Laboratory and Microelectronics Lab University of Illinois at Urbana‐Champaign Urbana IL 61801 USA
School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 China
College of Engineering University of Wisconsin—Madison Madison WI 53706 USA
References
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