journal article·2019-05Open access

Atomic Layer Deposition: Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics (Adv. Mater. Interfaces 10/2019)

Na Li, Zheng Wei, Jing Zhao, Qinqin Wang, Cheng Shen, Shuopei Wang, Jian Tang, Rong Yang, Dongxia Shi, Guangyu Zhang

Advanced Materials Interfaces· Volume 6· Issue 10

Abstract

A modified atomic layer deposition (ALD) approach in which one cycle includes one incremental organometallic pulse and multiple H2O pulses is developed to directly deposit uniform and high-quality high-κ dielectric layer on chemically inert 2D-materials without introducing any structural damages. The Al2O3 layer is integrated into MoS2 based flexible devices and exhibits excellent performances, indicating this approach is compatible for 2D-material electronics. More details can be found in article number 1802055 by Na Li, Rong Yang, Guangyu Zhang, and co-workers.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Science Beijing 100190 China

School of Physical Sciences University of Chinese Academy of Sciences Beijing 100190 China

Beijing Institute of Nanoenrgy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology (NCNST) Beijing 100190 China

Beijing Key Laboratory for Nanomaterials and Nanodevices Beijing 100190 China

Collaborative Innovation Center of Quantum Matter Beijing 100190 China

Songshan‐Lake Materials Laboratory Dongguan ,523808 Guangdong Province China

References

Reference metadata was not supplied for this record.