Single Crystalline GaN Tiles Grown on Si (111) Substrates by Confined Lateral Guided Growth to Eliminate Wafer Bowing

A novel concept termed confined lateral guided growth (CLGG) has been demonstrated to prepare single crystalline GaN microtiles with a goal to create high crystalline quality and strain‐free GaN on large‐sized Si (111) substrates. Uniform array of hexagonal GaN tiles has been created with a diameter of larger than 30 μm for each tile. As revealed by the surface pits density of around 2 × 10⁸ cm⁻², the density of dislocations in these GaN tiles has been significantly reduced compared with that obtained typically from a GaN heteroepitaxy on Si (111). The strain in GaN tiles has been dramatically reduced to nearly zero. This approach offers a route to eliminate wafer‐bowing for growing high crystalline quality GaN on Si, especially when the substrate size scales to 12 in and beyond. The growth behavior and mechanism within these confined growth masks are investigated by both finite element modeling and experimental studying, indicating that CLGG is dominated by gas phase diffusion.