Tunable Volatile to Non‐Volatile Resistive Switching in PbZrO₃ Antiferroelectric Thin Film for Neuromorphic Computing

Abstract A direct coupling of antiferroelectric (AFE) and resistive switching (RS) is realized for the first time in an oxide heterostructures (non‐tunneling mechanisms). This allows the resistance of the heterostructure to switch between volatile and non‐volatile RS behavior, which indicates a threshold RS and broadly increases its practical applicability. The stacks of Pt/PbZrO₃ (PZO)/LaNiO₃/SrTiO₃ (STO) is fabricated by laser pulse deposition. It exhibits a tunable RS behavior from volatile to nonvolatile through adjusting voltage amplitude. Moreover, a high ON/OFF ratio, good retention, and endurance characteristics are achieved. Furthermore, synaptic behaviors related to neural learning functions in PZO film is explored, that is, long‐term potential/depression, spike timing dependent plasticity, and paired pulse facilitation. This work provides a way to engineer AFE and RS pertinent functionality for the low‐energy‐consumption, non‐volatile neural computing.