Graphene–Silicon Layered Structures on Single‐Crystalline Ir(111) Thin Films
Source abstract
Abstract
Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene–silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Surface and Thin Film Phenomena · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Physics and University of Chinese Academy of Science Chinese Academy of Science Beijing 100190 China
Institute of Chemistry Chinese Academy of Science Beijing 100190 China
Condensed Matter Physics and Materials Science Department Brookhaven National Laboratory Upton NY 11973 USA
Center for Functional Nanomaterials Brookhaven National Laboratory Upton NY 11973 USA
Institut für Physik Universität Augsburg D‐86135 Augsburg Germany
Funding
MOST · NSFC · Chinese Academy of Sciences
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