journal article·2024-11Open access

Ultra‐Thin Metal Oxide Superstructure of Pd(001) as Passivation Interlayer at Organic/Metal Interface

Isheta Majumdar, Francesco Goto, Alberto Calloni, Lamberto Duò, Franco Ciccacci, Gianlorenzo Bussetti

Advanced Materials Interfaces· Volume 11· Issue 33

Abstract

Abstract At organic molecule/metal interfaces for electronic applications, it is required of the metal surface to be passivated in view of preserving the molecular properties of the ordered organic layer. This can be achieved by screening the metal with a single atomic layer of O, namely, ultra‐thin metal oxide (UTMO) layers. Cobalt tetraphenylporphyrins (CoTPP) on oxygen passivated Fe(001), with 1 ML O coverage, have revealed a molecule/substrate decoupling effect due to the formation of an ultra‐thin Fe oxide layer at the interface. However, the threshold concentration of surface O required to observe the decoupling effect has not been assessed yet. In this work, the possibility of stabilizing different ultra‐thin Pd oxide superstructures, characterized by a different number of O atoms per unit cell, is exploited to investigate the O decoupling effect on CoTPP films. Two Pd oxide superstructures are considered: Pd(001)‐p(2 × 2)O and Pd(001)‐p(√5 × √5)R27°O, with 0.25 and 0.80 ML O coverages, respectively, which are characterized by low‐energy electron diffraction (LEED), X‐ray and ultra‐violet photoelectron spectroscopies (XPS/UPS) and inverse photoemission spectroscopy (IPES). The results suggest a lower limit of 0.80 ML O coverage as a passivation interlayer to obtain an ordered and decoupled CoTPP monolayer on Pd(001).
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Research context

OpenAlex topics: Molecular Junctions and Nanostructures · Surface Chemistry and Catalysis · Electrocatalysts for Energy Conversion

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics Politecnico di Milano Leonardo da Vinci 32 Milan 20133 Italy

Institut National de la Recherche Scientifique – Énergie Matériaux Télécommunications Varennes Quebec J3X 1S2 Canada

Funding

Politecnico di Milano

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