journal article·2018-02

In Situ Electrical Properties’ Investigation and Nanofabrication of Ag/Sb2Te3 Assembled Multilayers’ Film

Zhenhua Wu, Xiang Chen, Yan Zhang, Chaochao Dun, David L. Carroll, Zhiyu Hu

Advanced Materials Interfaces· Volume 5· Issue 4
Publisher page

Abstract

Abstract Nanopatterned fabrication and electrical properties of Ag/Sb2Te3 layer‐by‐layer assembled films are systematically investigated by a conductive atomic force microscope. Multilayers’ film composed by alternating Ag and Sb2Te3 with respective thicknesses of 5 and 10 nm shows a bipolar resistive switching behavior contributed by the silver conductive filaments. Designed cross‐plane nanofilament arrays with reconfigurable patterns are fabricated, which show a potential application in memristor and nanofabrication. Multilayers with the same thickness of Ag but increased thickness of Sb2Te3 (up to 20 nm) present a Fowler–Nordheim tunneling‐dominated current and show in‐plane snowflake silver dendrite on the surface. Further studies on the silver dendrite may bring potential applications in extensive fields such as multifunctional data storage and neuromorphic. By controlling the type (Sb2Te3, Bi2Te3, etc.) and thickness of solid electrolyte materials, electronic devices with specific functions and applications can be designed.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Phase-change materials and chalcogenides · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of NanoMicroEnergy Shanghai Jiao Tong University Shanghai 200240 China

National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong University Shanghai 200240 China

Institute of NanoMicroEnergy Shanghai University Shanghai 200444 China

Center for Nanotechnology and Molecular Materials Department of Physics Wake Forest University Winston‐Salem NC 27109 USA

Department of Micro/Nano Electronics School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai 200240 China

Funding

National Natural Science Foundation of China

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