journal article·2025-07-15Open access

Enhanced Phonon-Assisted Tunneling in Metal-Twisted Bilayer Graphene Junctions

Radhika Soni, Suvronil Datta, Robin Bajaj, Saisab Bhowmik, Shinjan Mandal, Baladitya Suri, Kenji Watanabe, Takashi Taniguchi, Manish Jain, U. Chandni

ACS Nano· Volume 19· Issue 27

Abstract

-twisted bilayer graphene heterostructures across a broad range of gate and bias voltages. The observed experimental features are attributed to phonon-assisted tunneling and the significantly high density of states within the moiré bands. A notable finding is the enhanced phonon-assisted tunneling in twisted bilayer graphene compared to Bernal bilayer graphene, which arises from a more relaxed in-plane momentum matching criterion. Theoretical calculations of phonon dispersions enable us to identify low-energy phonon modes in both Bernal and twisted bilayers of graphene, thereby elucidating the underlying mechanism of tunneling. Our results establish planar tunneling as a versatile tool to further understand electron-phonon coupling in twisted van der Waals materials.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Instrumentation and Applied Physics

Indian Institute of Science

Department of Physics

Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funding

Ministry of Education, Culture, Sports, Science and Technology · Science and Engineering Research Board · Mission on Nano Science and Technology · Japan Society for the Promotion of Science · Ministry of Education, India

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