Topological Materials: Criteria for Realizing Room‐Temperature Electrical Transport Applications of Topological Materials (Adv. Mater. 50/2020)

The unusual properties exhibited by topological materials, such as 1D edge states that are spin-polarized, can enable routes to faster data processing with lower energy consumption. To realize such technologies, however, it is required that unwanted parallel bulk conduction through the trivial 2D/3D states is eliminated. In article number 2005698, Matthew Brahlek shows that redesigning materials at the atomic level to delicately balance bandgap, dielectric constant, and effective mass is critical to achieve this new generation of quantum-based technologies.