journal article·2022-01

Selective Antisite Defect Formation in WS2 Monolayers via Reactive Growth on Dilute W‐Au Alloy Substrates (Adv. Mater. 3/2022)

Kai Wang, Lizhi Zhang, Giang D. Nguyen, Xiahan Sang, Chenze Liu, Yiling Yu, Wonhee Ko, Raymond R. Unocic, Alexander A. Puretzky, Christopher M. Rouleau, David B. Geohegan, Lei Fu, Gerd Duscher, An‐Ping Li, Mina Yoon, Kai Xiao

Advanced Materials· Volume 34· Issue 3
Publisher page

Abstract

2D Materials In article number 2106674, Kai Xiao and co-workers develop a nonequilibrium chemical vapor deposition approach for selective formation of antisite defects in atomically thin 2D tungsten sulfide monolayer crystals by regulating the diffusion of tungsten into gold substrates. This work demonstrates a novel strategy for the selective formation of defects in 2D materials by tuning their formation energy during synthesis via choice of substrate and alloy design.
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Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials

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Affiliations

Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

Department of Physics and Astronomy University of Tennessee Knoxville TN 37916 USA

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Luoshi Road 122 Wuhan 430070 China

Nanostructure Research Centre Wuhan University of Technology Luoshi Road 122 Wuhan 430070 China

College of Chemistry and Molecular Science Wuhan University Wuhan 430072 China

Department of Materials Science and Engineering University of Tennessee Knoxville TN 37916 USA

References

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