Photocurrent Generation: Highly Efficient Photocurrent Generation from Nanocrystalline Graphene–Molybdenum Disulfide Lateral Interfaces (Adv. Mater. 9/2016)
Source abstract
Abstract
On page 1793, S.-W. Kim and co-workers report that nanocrystalline graphene–MoS2 lateral interfaces reveal distinct current-rectified characteristics, similar to a p–n diode, that are seldom observed for the monolayer graphene–MoS2 vertical interface. The lateral interfaces increase the Schottky barrier between the graphene and the MoS2 because the metallic MoS2 edges cause charge reordering and a potential shift in the graphene.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications
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Affiliations
School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 440‐746 Republic of Korea
Samsung Advanced Institute of Technology (SAIT) Yongin 446‐712 Republic of Korea
SKKU Advanced Institute of Nanotechnology (SAINT) Center for Human Interface Nanotechnology (HINT) SKKU‐SAMSUNG Graphene Center, Sungkyunkwan University (SKKU) Suwon 440‐746 Republic of Korea
References
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