Memory Devices: In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device (Adv. Mater. 47/2015)
Source abstract
Abstract
On page 7767, H.-S. P. Wong, P.-W. Chiu, T.-L. Ren, and co-workers demonstrate a resistive random access memory (RRAM) device with a tunable switching window. The SET voltage can be continuously tuned over a wide range by electrical gating. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R to potentially increase the RRAM density.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials
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Affiliations
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList) Tsinghua University Beijing 100084 China
Department of Electrical Engineering and Stanford System X Alliance Stanford University Stanford CA 94305 USA
Department of Electrical Engineering National Tsing Hua University Hsinchu 30013 Taiwan
References
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