DataVXAdvanced MaterialsPaper
journal article·2018-07Open access

Light‐Emitting Diodes: Monolithic Flexible Vertical GaN Light‐Emitting Diodes for a Transparent Wireless Brain Optical Stimulator (Adv. Mater. 28/2018)

Han Eol Lee, JeHyuk Choi, Seung Hyun Lee, Minju Jeong, Jung Ho Shin, Daniel J. Joe, DoHyun Kim, Chang Wan Kim, Jung Hwan Park, Jae Hee Lee, Daesoo Kim, Chan‐Soo Shin, Keon Jae Lee

Advanced Materials· Volume 30· Issue 28
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Source abstract

Abstract

In article number 1800649, Keon Jae Lee and co-workers demonstrate high-performance, transparent, flexible, GaN vertical micro-light-emitting-diodes (f-VLEDs) via a simple fabrication process. The wireless power supply system is successfully realized by transferring the electrical energy to the f-VLEDs, which realizes the possibility of a transparent wireless brain optical-stimulation system.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Advanced Sensor and Energy Harvesting Materials · Organic Light-Emitting Diodes Research

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Affiliations

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro Yuseong‐gu Daejeon 34141 Republic of Korea

Photonic Device Lab Device Technology Development Division Korea Advanced Nano‐Fab Center (KANC) 109 Gwanggyo‐ro Yeongtong‐gu, Suwon Gyeonggi‐do 16229 Republic of Korea

Department of Biological Sciences Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro Yuseong‐gu Daejeon 34141 Republic of Korea

References

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