Unexpected Dominance of Vertical Dislocations in High‐Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning (Adv. Mater. 32/2013)
Source abstract
Abstract
An innovative strategy in dislocation analysis is described by Anna Marzegalli et al. on page 4408 demonstrating that vertical dislocations dominate in thick Ge layers on silicon substrates.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Advanced Surface Polishing Techniques
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References
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