Cover Picture: Enhancement of Radiative Recombination in Silicon via Phonon Localization and Selection‐Rule Breaking (Adv. Mater. 7/2006)

Abstract The cover shows a low‐magnification TEM image of a periodically nanopatterned all‐silicon structure exhibiting enhanced light emission at room temperature. The microstructure was studied using high‐resolution TEM, allowing direct observation of high densities of structural defects in the nanopatterned silicon surface layer, which are held responsible for the phonon‐localization effect leading to enhanced radiative recombination, as reported on p. 841 by Xu and co‐workers.