Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies (Adv. Mater. 10/2017)
Source abstract
Abstract
Resistive switching processes in HfO2 are demonstrated by electron holography and in situ energy filtered imaging in article number 1602976 by Jinfeng Kang, Richeng Yu, and co-workers. The results identify that oxygen vacancies are generated gradually in the oxide layer under ramped electrical bias, resulting in the formation of conductive channels, and the switching process occurs at the top interface of the hafnia layer.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques
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Affiliations
Beijing National Laboratory of Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 P. R. China
Institute of Microelectronics Peking University Beijing 100871 P. R. China
School of Physical Sciences University of Chinese Academy of Sciences Beijing 100049 P. R. China
References
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