Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method
Source abstract
Abstract
Straight and well-aligned GaN nanorods have been obtained by horizontal hydride vapor phase epitaxy (HVPE) at a relatively low temperature (∼ 480 °C). This catalyst- and template- independent method involves the controllable growth of GaN nanorods on a sapphire substrate, with the rods preferentially oriented along the crystal c-axis. The Figure shows a cross-sectional SEM image of the GaN nanorods.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
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