Lithography: Resolution Limit in Plasmonic Lithography for Practical Applications beyond 2x‐nm Half Pitch (Adv. Mater. 44/2012)

The ultimate resolution of plasmonic lithography using a ridge aperture is evaluated using a theoretical model by Jae W. Hahn and co-workers on page OP337. A circular contact probe with high positioning accuracy is fabricated to record high density line array patterns with a half pitch up to 22 nm. The model fits well with the experimental results for pattern depth and predicts the resolution of plasmonic lithography to be less than 10 nm.