Unusual Binary Optical Reflectivity of Highly Structured Epitaxial Gallium Selenide Thin Films
Source abstract
Abstract
Novel optical reflectance has been observed in artificial epitaxial thin film surfaces of GaSe. The films, grown by chemical vapor deposition, can either strongly reflect or strongly absorb light, depending on the film's orientation. This unusual reflectivity is due to the formation of laths, visible in the Figure, which lie at an angle to the plane of the wafer.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides
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