DataVXAdvanced MaterialsPaper
journal article·2023-07Open access

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction (Adv. Mater. 28/2023)

Shi Fang, Liuan Li, Weiyi Wang, Wei Chen, Danhao Wang, Yang Kang, Xin Liu, Hongfeng Jia, Yuanmin Luo, Huabin Yu, Muhammad Hunain Memon, Wei Hu, Boon S. Ooi, Jr‐Hau He, Haiding Sun

Advanced Materials· Volume 35· Issue 28
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Source abstract

Abstract

Photoelectrodes A bipolar-junction photoelectrode based on a p–n-junction GaN nanowire array is shown by Haiding Sun and co-workers in article number 2300911 to exhibit unambiguously bipolar photoresponse with an output of positive and negative photocurrents under illumination of 365 nm and 265 nm light, respectively. Importantly, a dual-band optical communication system incorporated with such a photoelectrode is constructed using only one photoelectrode to decode dual-channel signals with encrypted property.
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Research context

Energy storageNanomaterials

OpenAlex topics: GaN-based semiconductor devices and materials

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Affiliations

School of Microelectronics University of Science and Technology of China Hefei 230026 P. R. China

Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 P. R. China<?vsp -20pt?>

Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) King Abdullah University of Science and Technology 21534 Thuwal Saudi Arabia

Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 P. R. China

The CAS Key Laboratory of Wireless‐Optical Communications University of Science and Technology of China 230027 Hefei P. R. China<?vsp 4pt?>

References

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