2D Materials: Synaptic Barristor Based on Phase‐Engineered 2D Heterostructures (Adv. Mater. 35/2018)
Source abstract
Abstract
In article number 1801447, Gunuk Wang, Chul-Ho Lee, and co-workers report an artificial synaptic architecture by monolithically integrating a memristor and a barristor using phase-engineered 2D heterostructures. This three-terminal artificial synapse, termed as a “synaptic barristor”, can implement fundamental synaptic functions with external gate controllability. Such unique capabilities enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing
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Affiliations
KU‐KIST Graduate School of Converging Science and Technology Korea University 145 Anam‐ro Seongbuk‐gu Seoul 02841 Republic of Korea
Department of Physics Korea University 145 Anam‐ro Seongbuk‐gu Seoul 02841 Republic of Korea
School of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) UNIST‐gil 50 Ulsan 44919 Republic of Korea
UNIST Central Research Facilities (UCRF) Ulsan National Institute of Science and Technology (UNIST) UNIST‐gil 50 Ulsan 44919 Republic of Korea
References
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