Transparent Nanoscale Floating Gate Memory Using Self‐Assembled Bismuth Nanocrystals in Bi₂Mg_2/3Nb_4/3O₇ (BMN) Pyrochlore Thin Films Grown at Room Temperature

Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi2Mg2/3Nb4/3O7 (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the “real” structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al2O3 and HfO2 layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.