Pyramid‐Shaped Si/Ge Superlattice Quantum Dots with Enhanced Photoluminescence Properties
Source abstract
Abstract
Pyramid-shaped Si/Ge superlattice quantum dots (QDs, see Figure) have been fabricated using self-assembled Ge QDs as a “virtual nanomask” for selective wet etching of the Si/Ge superlattice. The nanodots exhibit an approximately tenfold increase in photoluminescence over conventional Si/Ge superlattice heterostructures.
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and interfaces
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References (27)
Show source-provided references
1. 10.1126/science.285.5433.155110.1126/science.285.5433.1551 ↗
2. 10.1103/PhysRevLett.67.132610.1103/PhysRevLett.67.1326 ↗
3. 10.1103/PhysRevB.44.1094510.1103/PhysRevB.44.10945 ↗
4. 10.1063/1.37100010.1063/1.371000 ↗
5. 10.1063/1.140263810.1063/1.1402638 ↗
6. 10.1063/1.10791810.1063/1.107918 ↗
7. C. W. Liu L. J. Chen inEncyclopedia of Nanoscience and Nanotechnology(Ed: H. S. Nalwa) Vol. 9 American Scientific Stevenson Ranch CA2004 pp. 775–792.
8. 10.1063/1.160524210.1063/1.1605242 ↗
9. 10.1063/1.163507310.1063/1.1635073 ↗
10. M. Shikida K. Sato K. Tokoro D. Uchikawa inProc. IEEE Micro Electro Mech. Syst. IEEE Piscataway NJ1999 315.10.1109/MEMSYS.1999.746845 ↗
11. J. T. Borenstein N. D. Gerrish M. T. Currie E. A. Fitzgerald inProc. IEEE Micro Electro Mech. Syst. IEEE Piscataway NJ1999 205.10.1109/MEMSYS.1999.746810 ↗
12. 10.1063/1.9983210.1063/1.99832 ↗
13. 10.1063/1.11839710.1063/1.118397 ↗
14. 10.1103/PhysRevB.51.1386810.1103/PhysRevB.51.13868 ↗
15. 10.1016/j.apsusc.2003.08.09810.1016/j.apsusc.2003.08.098 ↗
16. 10.1063/1.10524910.1063/1.105249 ↗
17. 10.1063/1.11628410.1063/1.116284 ↗
18. 10.1103/PhysRevB.37.127310.1103/PhysRevB.37.1273 ↗
19. 10.1103/PhysRevB.37.876310.1103/PhysRevB.37.8763 ↗
20. 10.1021/cm990751410.1021/cm9907514 ↗
21. 10.1103/PhysRevB.51.165810.1103/PhysRevB.51.1658 ↗
22. 10.1063/1.141349510.1063/1.1413495 ↗
23. J. R. Lakowicz Principles of Fluorescence Spectroscopy 2nd ed. Kluwer Dordrecht The Netherlands1999.10.1007/978-1-4757-3061-6 ↗
24. F. Schaffler inProperties of Advanced Semiconductor Materials GaN AlN InN BN SiC SiGe(Eds: M. E. Levinshtein S. L. Rumyantsev M. S. Shur) Wiley New York2001 p. 149.
25. 10.1038/3504401210.1038/35044012 ↗
26. 10.1038/3509053910.1038/35090539 ↗
27. 10.1103/PhysRevLett.64.105510.1103/PhysRevLett.64.1055 ↗