journal article·2008-12-02

Reversible Modulation of Conductance in Silicon Devices via UV/Visible‐Light Irradiation

Tao He, Meng Lu, Jun Yao, Jianli He, Bo Chen, Neil Halen Di Spigna, David P. Nackashi, Paul D. Franzon, James M. Tour

Advanced Materials· Volume 20· Issue 23
Publisher page

Abstract

Silicon devices bearing grafted molecular monolayers have their conductance reversibly modulated. By alternately illuminating the samples with visible and near-UV light, threshold-voltage shifts occur to the negative and positive directions, respectively. This corresponds to charge transfer/redistribution between the silicon device and the grafted molecules.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Molecular Junctions and Nanostructures · Nanowire Synthesis and Applications · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (46)

Show source-provided references
1. Sze S. M. · 2001
2. Sze S. M. · 2007
3. 10.1038/nature0450110.1038/nature04501 ↗
4. 10.1038/439671a10.1038/439671a ↗
5. 10.1021/ar990047t10.1021/ar990047t ↗
6. 10.1116/1.149154310.1116/1.1491543 ↗
7. 10.1021/ja063571l10.1021/ja063571l ↗
8. 10.1002/adfm.20050018710.1002/adfm.200500187 ↗
9. 10.1002/1521-3765(20010417)7:8<1743::AID-CHEM17430>3.0.CO;2-X10.1002/1521-3765(20010417)7:8<1743::AID-CHEM17430>3.0.CO;2-X ↗
10. 10.1016/S0009-2614(97)01387-010.1016/S0009-2614(97)01387-0 ↗
11. 10.1002/cphc.20030078510.1002/cphc.200300785 ↗
12. 10.1063/1.165088010.1063/1.1650880 ↗
13. 10.1016/j.physe.2003.11.18910.1016/j.physe.2003.11.189 ↗
14. 10.1063/1.152769810.1063/1.1527698 ↗
15. 10.1073/pnas.23227669910.1073/pnas.232276699 ↗
16. 10.1021/la034187u10.1021/la034187u ↗
17. 10.1021/ja076878910.1021/ja0768789 ↗
18. D.Cahen I.Lubomirsky Molecular Controlled Semiconductor Device US Patent 2006/0118903 A1 (Pub. No.) 2006.
19. 5bD.Cahen K.Gartsman A.Kadyshevitch R.Naaman A.Shanzer Hybrid Organic‐Inorganic Semiconductor Structures and Sensors Based Thereon US Patent 6 433 356 2002.
20. 10.1038/nmat110510.1038/nmat1105 ↗
21. 10.1063/1.147137810.1063/1.1471378 ↗
22. 10.1063/1.12038110.1063/1.120381 ↗
23. 10.1103/PhysRevB.54.R1432110.1103/PhysRevB.54.R14321 ↗
24. 10.1038/nmat205910.1038/nmat2059 ↗
25. 10.1021/ja071960p10.1021/ja071960p ↗
26. 10.1021/jp063614k10.1021/jp063614k ↗
27. 10.1103/PhysRevLett.93.17830210.1103/PhysRevLett.93.178302 ↗
28. 10.1524/zpch.1997.202.Part_1_2.26310.1524/zpch.1997.202.Part_1_2.263 ↗
29. 10.1021/la001101d10.1021/la001101d ↗
30. 10.1021/jp993336810.1021/jp9933368 ↗
31. 10.1021/jp030509r10.1021/jp030509r ↗
32. Ono M. · Inst. Pure Appl. Phys. Conf. Series · 2005 · 6 · 27
33. 10.1063/1.37244710.1063/1.372447 ↗
34. 10.1021/nl071917010.1021/nl0719170 ↗
35. 10.1021/ja038312010.1021/ja0383120 ↗
36. 10.1021/cm051104h10.1021/cm051104h ↗
37. 10.1021/la990496210.1021/la9904962 ↗
38. 10.1021/cr000064s10.1021/cr000064s ↗
39. 10.1109/55.14497210.1109/55.144972 ↗
40. 10.1016/S0026-2714(02)00027-610.1016/S0026-2714(02)00027-6 ↗
41. 10.1016/S0038-1101(00)00187-810.1016/S0038-1101(00)00187-8 ↗
42. 10.1016/S0038-1101(03)00065-010.1016/S0038-1101(03)00065-0 ↗
43. Schroder D. K. · 2006
44. 10.1021/ol036182u10.1021/ol036182u ↗
45. 10.1002/prac.1990332021610.1002/prac.19903320216 ↗
46. 12cH.Milz H. J.Schladetsch Monodiazotization of Aromatic Diamines; Ger. Offen. DE 25555151977 15 pp.