Submicrometer Functionalization of Porous Silicon by Electron Beam Lithography
Source abstract
Abstract
Functionalization of porous silicon (PS) by an innovative method based on electron beam (EB) irradiation is reported. It is shown that EB irradiation induces hydrogen desorption from PS, leaving a very reactive surface, and that this PS surface undergoes local modification when treated with unsaturated hydrocarbons immediately after EB exposure. Finally, the authors demonstrate that different molecules can be attached to the same chip in different regions with the resolution typical of EB lithography, i.e., submicrometer patterning is possible.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. Anderson R.C. · Sens. Actuators A · 1990 · 21 · 835
2. 10.1103/PhysRevB.51.219910.1103/PhysRevB.51.2199 ↗
3. 10.1126/science.278.5339.84010.1126/science.278.5339.840 ↗
4. 10.1016/S0928-4931(01)00219-310.1016/S0928-4931(01)00219-3 ↗
5. 10.1149/1.210080510.1149/1.2100805 ↗
6. R. Halimaoui inPorous Silicon Science and Technology(Eds: J. C. Vial J. Derrien) Les Editions de Physique Les Ulis; Springer Berlin1995 Ch. 3.
7. 10.1016/S0040-6090(96)09361-310.1016/S0040-6090(96)09361-3 ↗
8. 10.1149/1.208552610.1149/1.2085526 ↗
9. 10.1063/1.11494210.1063/1.114942 ↗
10. 10.1016/S0921-5107(99)00240-810.1016/S0921-5107(99)00240-8 ↗
11. 10.1021/ja963540y10.1021/ja963540y ↗
12. 10.1002/(SICI)1521-3773(19990712)38:13/14<1966::AID-ANIE1966>3.0.CO;2-510.1002/(SICI)1521-3773(19990712)38:13/14<1966::AID-ANIE1966>3.0.CO;2-5 ↗
13. 10.1149/1.143267910.1149/1.1432679 ↗
14. 10.1021/ja974012510.1021/ja9740125 ↗
15. 10.1021/ja971223110.1021/ja9712231 ↗
16. 10.1021/ja973451110.1021/ja9734511 ↗
17. 10.1021/ic980303i10.1021/ic980303i ↗
18. 10.1002/(SICI)1521-3773(19981016)37:19<2683::AID-ANIE2683>3.0.CO;2-Y10.1002/(SICI)1521-3773(19981016)37:19<2683::AID-ANIE2683>3.0.CO;2-Y ↗
19. 10.1002/(SICI)1521-3773(19981217)37:23<3257::AID-ANIE3257>3.0.CO;2-110.1002/(SICI)1521-3773(19981217)37:23<3257::AID-ANIE3257>3.0.CO;2-1 ↗
20. 10.1002/(SICI)1521-4095(199903)11:3<265::AID-ADMA265>3.0.CO;2-W10.1002/(SICI)1521-4095(199903)11:3<265::AID-ADMA265>3.0.CO;2-W ↗
21. 10.1038/nmat70210.1038/nmat702 ↗
22. 10.1038/nmat70710.1038/nmat707 ↗
23. At the employed doses we cannot exclude the occurrence of the proximity effect. See e.g. M. A. McCord M. J. Rooks inHandbook of Microlithography Micromachining and Microfabrication(Eds: P. Ray‐Choudhury) SPIE Washington DC1997 p. 157.
24. 10.1002/adma.20039003110.1002/adma.200390031 ↗