journal article·1992-09

A new class of self‐assembled monolayers: Organic thiols on gallium arsenide

Colin D. Bain

Advanced Materials· Volume 4· Issue 9
Publisher page

Abstract

The spontaneous assembly of long chain thiols on the clean oxide‐free surface of gallium arsenide has recently been reported by a group at Penn State University. In the past, the substrates on which this was possible were restricted to the group 10 and 11 metals Au, Ag, Pt, and Cu, and the oxides of silicon, aluminum and silver. The work and its consequences for GaAs‐based microelectronics are discussed.
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Research context

OpenAlex topics: Molecular Junctions and Nanostructures · Quantum Dots Synthesis And Properties · Nanowire Synthesis and Applications

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References (55)

Show source-provided references
1. Ulman A. · 1991
2. 10.1021/ja00225a05010.1021/ja00225a050 ↗
3. 10.1021/ja00041a05110.1021/ja00041a051 ↗
4. 10.1103/PhysRevLett.66.71510.1103/PhysRevLett.66.715 ↗
5. 10.1126/science.252.5009.116410.1126/science.252.5009.1164 ↗
6. 10.1126/science.255.5049.123010.1126/science.255.5049.1230 ↗
7. 10.1021/la00101a00110.1021/la00101a001 ↗
8. 10.1007/978-1-4899-2070-610.1007/978-1-4899-2070-6 ↗
9. 10.5006/1.358525910.5006/1.3585259 ↗
10. 10.1002/adma.1990002060510.1002/adma.19900020605 ↗
11. 10.1002/adma.1990002120310.1002/adma.19900021203 ↗
12. 10.1002/adma.1989001040310.1002/adma.19890010403 ↗
13. 10.1021/ja00019a01110.1021/ja00019a011 ↗
14. Sagiv J. · J. Am. Chem. Soc. · 1980 · 102
15. 10.1021/la00061a00710.1021/la00061a007 ↗
16. 10.1021/la00061a00810.1021/la00061a008 ↗
17. 10.1021/ja00005a07110.1021/ja00005a071 ↗
18. 10.1021/ja00030a07610.1021/ja00030a076 ↗
19. 10.1063/1.169882610.1063/1.1698826 ↗
20. 10.1107/S0365110X5600111X10.1107/S0365110X5600111X ↗
21. 10.1063/1.44483510.1063/1.444835 ↗
22. 10.1021/la00081a00910.1021/la00081a009 ↗
23. 10.1021/la00093a02610.1021/la00093a026 ↗
24. Ref. [1] p.290.
25. 10.1021/la00089a00310.1021/la00089a003 ↗
26. 10.1063/1.45952810.1063/1.459528 ↗
27. 10.1016/0039-6028(79)90518-110.1016/0039-6028(79)90518-1 ↗
28. 10.1016/0039-6028(81)90082-010.1016/0039-6028(81)90082-0 ↗
29. 10.1021/j100172a04610.1021/j100172a046 ↗
30. 10.1116/1.58473210.1116/1.584732 ↗
31. 10.1021/ja00012a01110.1021/ja00012a011 ↗
32. 10.1021/la00039a02010.1021/la00039a020 ↗
33. D. L.Allara private communication.
34. 10.1063/1.46008210.1063/1.460082 ↗
35. 10.1021/la00051a00110.1021/la00051a001 ↗
36. 10.1021/ja00008a00110.1021/ja00008a001 ↗
37. 10.1021/ja00183a04910.1021/ja00183a049 ↗
38. 10.1021/la00066a01610.1021/la00066a016 ↗
39. 10.1021/ja00200a04010.1021/ja00200a040 ↗
40. 10.1063/1.45942310.1063/1.459423 ↗
41. 10.1017/CBO978051162256410.1017/CBO9780511622564 ↗
42. J. Vac. Sci. Tech. 1991 B9 4
43. Fraser D. A. · 1986
44. Roderick E. H. · 1988
45. 10.1016/0167-5729(88)90003-910.1016/0167-5729(88)90003-9 ↗
46. 10.1016/0040-6090(83)90569-210.1016/0040-6090(83)90569-2 ↗
47. 10.1063/1.10145110.1063/1.101451 ↗
48. 10.1063/1.10087310.1063/1.100873 ↗
49. 10.1063/1.34520110.1063/1.345201 ↗
50. 10.1063/1.9887710.1063/1.98877 ↗
51. 10.1116/1.58574310.1116/1.585743 ↗
52. A nearly ideal Schottky diode can be made from an octadecanethiol‐treated GaAs surface.O. S.Nakagawa S.Ashok C. W.Sheen J.Mårtensson D. L.Allara Ext. Abstr.1991Int. Conf. Solid State Devices and Materials p.290.
53. 10.1126/science.202085310.1126/science.2020853 ↗
54. 10.1021/ja00167a02810.1021/ja00167a028 ↗
55. Murray R. W. · 1984 · 191