High-Temperature Epitaxy of Metastable Sulfides on Oxide Substrates Using Stoichiometric Transportation
Source abstract
Abstract
Pulsed laser deposition (PLD) has been employed to grow W-ZnS films on c-plane (001) sapphire substrates at high temperature (800 °C). This enabled the observation of excitonic resonances and the investigation of optical properties of W-ZnS films for the first time. High-temperature growth of W-ZnS can trigger novel integrations, such as heterostructures or alloys between sulfides and oxides or nitrides. It can also stimulate investigations into the growth of sulfides on various materials and could provide an innovative method for the application of sulfides.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
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