Memory Devices: Device‐Level Photonic Memories and Logic Applications Using Phase‐Change Materials (Adv. Mater. 32/2018)
Source abstract
Abstract
In article number 1802435, Harish Bhaskaran and co-workers develop a practical and elegant technique to optically program photonic phase-change devices by using optical pulse-width modulation to switch the phasechange material Ge2Sb2Te5. With this technique, they demonstrate integrated nonvolatile photonic memories with complete random accessibility and programmable optical logic devices with “OR” and “NAND” achieved on a single photonic phase-change cell.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Photonic and Optical Devices
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Affiliations
Department of Materials University of Oxford Parks Road Oxford OX1 3PH UK
Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
Department of Engineering University of Exeter Exeter EX4 4QF UK
Institute of Physics University of Muenster Heisenbergstr, 11 48149 Muenster Germany
References
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