DataVXAdvanced MaterialsPaper
journal article·2022-01Open access

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions (Adv. Mater. 3/2022)

Alexander M. Jakob, Simon G. Robson, Vivien Schmitt, Vincent Mourik, Matthias Posselt, Daniel Spemann, Brett C. Johnson, Hannes R. Firgau, Edwin Mayes, Jeffrey C. McCallum, Andrea Morello, David N. Jamieson

Advanced Materials· Volume 34· Issue 3
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Source abstract

Abstract

Near-Surface Doping In article number 2103235, David N. Jamieson and co-workers report that single-crystal silicon can be configured with arrays of single, near-surface, dopant atoms using on-chip electrodes and low-noise charge-sensitive electronics to register single-ion implants. Suitable for integration with a nanostencil scanner to localize the implants, the system makes use of the signal of electron–hole pairs generated as the ions dissipate their kinetic energy in the crystal. The system can be part of an engineering strategy for high-confidence fabrication of large-scale donor arrays to exploit donor spin ensembles in silicon devices.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsBiomaterials

OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques

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Affiliations

School of Physics ARC Centre for Quantum Computation and Communication Technology University of Melbourne Parkville VIC 3010 Australia

School of Electrical Engineering and Telecommunications ARC Centre for Quantum Computation and Communication Technology UNSW Sydney Sydney NSW 2052 Australia

Helmholtz‐Zentrum Dresden‐Rossendorf (HZDR) Dresden 01328 Saxony Germany

Leibniz Institute of Surface Engineering (IOM) Leipzig 04318 Saxony Germany

RMIT Microscopy and Microanalysis Facility RMIT University Melbourne VIC 3001 Australia

References

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