Memristors: Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors (Adv. Mater. 14/2016)
Source abstract
Abstract
As information bits of 0's and 1's are stored in crosspoint tantalum oxide memristors, or resistive random access memory (RRAM) cells, nanoscale-resolution in operando X-ray transmission spectromicroscopy is used by J. P. Strachan and co-workers, as reported on page 2772, to directly observe oxygen migration and clustering, revealing an important operation and failure mechanism of RRAM, a frontrunner technology for next-generation computer memory.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing
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Affiliations
Hewlett Packard Laboratories 1501 Page Mill Rd Palo Alto CA 94304 USA
Department of Electrical Engineering Stanford University Stanford CA 94305 USA
Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory 2575 Sand Hill Road Menlo Park CA 94025 USA
References
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