Flexible Gallium Nitride: Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices (Adv. Mater. 47/2017)
Source abstract
Abstract
In article number 1701838, Nicholas R. Glavin and co-workers describe the use of a series of flexible gallium nitride radio-frequency devices for power amplification of wireless signals at high frequencies for future wearable and conformal electronics. The flexible GaN, in this case, is realized through epitaxial lift-off using a 2D h-BN release layer and can accommodate strains up to 0.43% with performance rivaling that of rigid GaN materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
Air Force Research Laboratory Materials and Manufacturing Directorate Wright‐Patterson AFB OH 45433 USA
Air Force Research Laboratory Sensors Directorate Wright‐Patterson AFB OH 45433 USA
KBRwyle Dayton OH 45431 USA
References
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