Direct Nanoimprinting of Si Single Crystals Using SiC Molds for Ordered Anodic Tunnel Etching

Ordered hole-array structures of Si single crystals (see Figure) are formed by direct imprinting with an SiC mold followed by subsequent anode etching in HF solution. In this process, the ordered array of shallow concaves prepared by direct imprinting can act as starting points for the development of uniform-sized straight holes with high aspect ratios. This process is simple and has a high throughput for the fabrication of ordered Si hole arrays.