Growth and Characterization of Well-Aligned nc-Si/SiOx Composite Nanowires

The template- and catalyst-free synthesis of well-aligned nc-Si/SiOx composite nanowires (see Figure) is reported. Hot filament chemical vapor deposition on a catalyst-free substrate using a SiCl4/H2 mixture is the method used. Investigation of the photoluminescence characteristics of these composite nanowires reveals a broad emission band ranging from 420 to 585 nm.