Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa2O4 Nanotubes
Source abstract
Abstract
Ga-doped ZnS nanowires are used as precursors for the preparation of ZnO/ZnGa2O4 composite nanotubes, as shown in the figure. Oxidation of the nanowires induces phase separation resulting in the formation of ZnO/ZnGa2O4 phosphor heterostructures. The nanowires essentially serve as both precursors and templates for the fabrication of the nanotubes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Quantum Dots Synthesis And Properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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