DataVXAdvanced MaterialsPaper
journal article·2016-05

Hybridization‐Induced Carrier Localization at the C60/ZnO Interface

Leah L. Kelly, David A. Racke, Hyungchul Kim, Paul Ndione, Ajaya K. Sigdel, Joseph J. Berry, Samuel Graham, Dennis Nordlund, Oliver L. A. Monti

Advanced Materials· Volume 28· Issue 20
Publisher page
Source abstract

Abstract

Electronic coupling and ground-state charge transfer at the C60 /ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Fullerene Chemistry and Applications · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry and Biochemistry University of Arizona 1306 E. University Blvd. Tucson AZ 85721 USA

School of Mechanical Engineering and Center for Organic Photonics and Electronics Georgia Institute of Technology Atlanta GA 30332 USA

National Renewable Energy Laboratory National Center for Photovoltaics Golden CO 80401 USA

Stanford Linear Accelerator Campus Stanford Synchrotron Laboratory Menlo Park CA 94025 USA

Department of Physics University of Arizona 118 E. Fourth St. Tucson AZ 85721 USA

Funding

U.S. Department of Energy, Office of Science, Basic Energy Sciences

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