journal article·2008-03-05

Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures

S. M. de Sousa Pereira, M. A. Martins, T. Trindade, I. M. Watson, D. Zhu, C. J. Humphreys

Advanced Materials· Volume 20· Issue 5
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Abstract

Spontaneously formed nano-pits are exploited to effectively control the incorporation of gold nanocrystals (NCs) at the surface of light emitting InGaN/GaN heterostructures. Nano- engineering either the NCs size, or pit size, allows the number of NCs incorporated in each pit to be controlled, thus enabling research of well-defined assemblies of few gold NCs using an optically and electrically active substrate (see figure). The development of new nano-devices based on such hybrid nanostructures is briefly discussed.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Quantum Dots Synthesis And Properties · Gold and Silver Nanoparticles Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (30)

Show source-provided references
1. 10.1146/annurev.matsci.30.1.54510.1146/annurev.matsci.30.1.545 ↗
2. 10.1126/science.271.5251.93310.1126/science.271.5251.933 ↗
3. 10.1038/3500353510.1038/35003535 ↗
4. V. I. Klimov Semiconductor and Metal Nanocrystals: Synthesis and Electronic and Optical Properties CRC Press London2003.
5. 10.1021/cm000843p10.1021/cm000843p ↗
6. 10.1038/nature0269510.1038/nature02695 ↗
7. 10.1038/nature0121710.1038/nature01217 ↗
8. 10.1038/3953510.1038/39535 ↗
9. 10.1021/nl049488i10.1021/nl049488i ↗
10. 10.1146/annurev.matsci.34.052803.09110010.1146/annurev.matsci.34.052803.091100 ↗
11. 10.1002/adfm.20030000210.1002/adfm.200300002 ↗
12. 10.1143/JJAP.35.L7410.1143/JJAP.35.L74 ↗
13. 10.1126/science.281.5379.95610.1126/science.281.5379.956 ↗
14. 10.1063/1.12085310.1063/1.120853 ↗
15. 10.1063/1.12383710.1063/1.123837 ↗
16. A. Hangleiter F. Hitzel C. Netzel D. Fuhrmann U. Rossow G. Ade P. Hinze Phys. Rev. Lett.2005 95.10.1103/PhysRevLett.95.127402 ↗
17. 10.1063/1.128990410.1063/1.1289904 ↗
18. 10.1038/nature0257110.1038/nature02571 ↗
19. 10.1021/nl048087010.1021/nl0480870 ↗
20. B. Gil Low‐Dimensional Nitride Semiconductors Oxford University Press New York2002.10.1093/oso/9780198509745.001.0001 ↗
21. 10.1002/adfm.20060065010.1002/adfm.200600650 ↗
22. 10.1002/1521-3951(200109)227:1<1::AID-PSSB1>3.0.CO;2-Q10.1002/1521-3951(200109)227:1<1::AID-PSSB1>3.0.CO;2-Q ↗
23. 10.1016/j.jcrysgro.2006.10.23510.1016/j.jcrysgro.2006.10.235 ↗
24. 10.1126/science.111484910.1126/science.1114849 ↗
25. 10.1039/B514191E10.1039/B514191E ↗
26. 10.1088/0268-1242/18/4/30410.1088/0268-1242/18/4/304 ↗
27. 10.1021/ja00904a00110.1021/ja00904a001 ↗
28. 10.1063/1.37114510.1063/1.371145 ↗
29. 10.1126/science.275.5303.110210.1126/science.275.5303.1102 ↗
30. 10.1021/nl060392t10.1021/nl060392t ↗