High Density and Large Area Arrays of Silicon Oxide Pillars with Tunable Domain Size for Mask Etch Applications
Source abstract
Abstract
Silicon oxide pillars with tunable feature sizes and pitches are fabricated based on a block copolymer self-assembly template. By using reactive ion etching (RIE), the feature size of the silicon oxide pillars can be tuned without affecting the pitch. Using BCP with a different molecular weight can change the pitch size of the silicon oxide pillars. An area density of up to 2 teradots/inch(2) is achieved.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanofabrication and Lithography Techniques · Block Copolymer Self-Assembly · Advancements in Photolithography Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
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1. Moore G. · Electronics · 1965 · 114
2. 10.1088/0957-4484/20/29/29200110.1088/0957-4484/20/29/292001 ↗
3. 10.1002/adma.20060088210.1002/adma.200600882 ↗
4. 10.1116/1.289097210.1116/1.2890972 ↗
5. 10.1126/science.116810810.1126/science.1168108 ↗
6. 10.1126/science.115762610.1126/science.1157626 ↗
7. 10.1126/science.115935210.1126/science.1159352 ↗
8. 10.1002/smll.20080140910.1002/smll.200801409 ↗
9. 10.1002/smll.20080157310.1002/smll.200801573 ↗
10. 10.1021/ma802480s10.1021/ma802480s ↗
11. 10.1021/nn800073f10.1021/nn800073f ↗
12. 10.1021/nn700441510.1021/nn7004415 ↗
13. 10.1002/adma.20070199710.1002/adma.200701997 ↗
14. 10.1021/nl080511010.1021/nl0805110 ↗
15. 10.1021/ma071321z10.1021/ma071321z ↗
16. 10.1021/nl070924l10.1021/nl070924l ↗
17. 10.1021/nl904141r10.1021/nl904141r ↗
18. 10.1002/smll.20090005310.1002/smll.200900053 ↗
19. 10.1002/adma.20080285510.1002/adma.200802855 ↗
20. 10.1002/adma.20080208710.1002/adma.200802087 ↗
21. 10.1002/adma.20090051810.1002/adma.200900518 ↗
22. 10.1021/ma901894410.1021/ma9018944 ↗
23. Hamley I. W. · 1998 · 42510.1093/oso/9780198502180.001.0001 ↗
24. 10.1002/adfm.20030437410.1002/adfm.200304374 ↗