Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions (Adv. Mater. 6/2019)
Source abstract
Abstract
In article number 1805656, Rui Chen, Liyuan Zhang, Youpin Gong, and co-workers develop an h-BN/MoTe2/graphene/SnS2/h-BN van der Waals heterostructure to realize an ultrahigh-sensitivity broadband (405–1550 nm) photodetector, due to its unique advantages for high-efficiency light absorption and exciton dissociation. Graphene plays a key role in enhancing the sensitivity and broadening the spectral range, providing a viable approach toward future ultrahigh sensitivity and broadband photodetectors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Conducting polymers and applications · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics Southern University of Science and Technology Shenzhen 518055 China
Department of Physics Harbin Institute of Technology Harbin 150001 China
Department of Physics and Astronomy University of Kansas Lawrence KS 66045 USA
Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 China
SUSTech Academy for Advanced Interdisciplinary Studies Southern University of Science and Technology Shenzhen 518055 China
References
Reference metadata was not supplied for this record.