DataVXAdvanced MaterialsPaper
journal article·2015-12Open access

Tuning Band Alignment Using Interface Dipoles at the Pt/Anatase TiO2 Interface

Takashi Tachikawa, Makoto Minohara, Yasuyuki Hikita, Christopher Bell, Harold Y. Hwang

Advanced Materials· Volume 27· Issue 45
Publisher pageOpen full text
Source abstract

Abstract

The Schottky barrier heights at the Pt/TiO2 (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO3. The large electric field in the LaAlO3 is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. These results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Stanford Institute for Materials and Energy Sciences SLAC National Accelerator Laboratory 2575 Sand Hill Road Menlo Park CA 94025 USA

Department of Advanced Materials Science The University of Tokyo 5‐1‐5 Kashiwanoha Kashiwa Chiba 277‐8561 Japan

Photon Factory Institute of Materials Structure Science High Energy Accelerator Research Organization Oho, Tsukuba Ibaraki 305‐0801 Japan

School of Physics University of Bristol H. H. Wills Physics Laboratory Tyndall Avenue Bristol BS8 1TL UK

Department of Applied Physics Geballe Laboratory for Advanced Materials Stanford University 476 Lomita Mall Stanford University Stanford CA 94305 USA

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